Proceedings of the International Symposium on Power Semiconductor Devices and ICs- Impact Score, Ranking, SJR, h-index, Citescore, Rating, Publisher, ISSN, and Other Important Details

About Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs is a conference and proceedings published by . This conference and proceedings covers the area[s] related to Engineering (miscellane, etc. The coverage history of this conference and proceedings is as follows: . The rank of this conference and proceedings is 7015. This conference and proceedings's impact score, h-index, and SJR are 2.14, 49, and 0.709, respectively. The ISSN of this conference and proceedings is/are as follows: 10636854.

The best quartile of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is -. This conference and proceedings has received a total of 821 citations during the last three years (Preceding 2020).

Proceedings of the International Symposium on Power Semiconductor Devices and ICs Impact Score 2020-2021

The latest impact score (IS) of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 2.14. It is computed in the year 2021 as per its definition and based on Scopus data.

The impact score (IS), also denoted as the Journal impact score (JIS), of an academic journal is a measure of the yearly average number of citations to recent articles published in that journal. It is based on Scopus data.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs h-index

 

The h-index of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 49. By definition of the h-index, this conference and proceedings has at least 49 published articles with more than 49 citations.

What is h-index?

The h-index (also known as the Hirsch index or Hirsh index) is a scientometric parameter used to evaluate the scientific impact of the publications and journals. It is defined as the maximum value of h such that the given Journal has published at least h papers and each has at least h citations.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs ISSN

The International Standard Serial Number (ISSN) of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is/are as follows: 10636854.

The ISSN is a unique 8-digit identifier for a specific publication like Magazine or Journal. The ISSN is used in the postal system and in the publishing world to identify the articles that are published in journals, magazines, newsletters, etc. This is the number assigned to your article by the publisher, and it is the one you will use to reference your article within the library catalogues.

ISSN code (also called as "ISSN structure" or "ISSN syntax") can be expressed as follows: NNNN-NNNC
Here, N is in the set {0,1,2,3...,9}, a digit character, and C is in {0,1,2,3,...,9,X}

Proceedings of the International Symposium on Power Semiconductor Devices and ICs Ranking and SCImago Journal Rank (SJR)

The Proceedings of the International Symposium on Power Semiconductor Devices and ICs is ranked 7015 among 27955 Journals, Conferences, and Book Series. As per SJR, this conference and proceedings is ranked 0.709.

SCImago Journal Rank is an indicator, which measures the scientific influence of journals. It considers the number of citations received by a journal and the importance of the journals from where these citations come.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs Publisher

The publisher of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is . The publishing house of this conference and proceedings is located in the United States. Its coverage history is as follows: .

Call For Papers (CFPs)

Please check the official website of this conference and proceedings to find out the complete details and Call For Papers (CFPs).

Abbreviation

The International Organization for Standardization 4 (ISO 4) abbreviation of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is Proc. Int. Symp. Power Semicond. Devices ICs. ISO 4 is an international standard which defines a uniform and consistent system for the abbreviation of serial publication titles, which are published regularly. The primary use of ISO 4 is to abbreviate or shorten the names of scientific journals using the technique of List of Title Word Abbreviations (LTWA).

As ISO 4 is an international standard, the abbreviation ('Proc. Int. Symp. Power Semicond. Devices ICs') can be used for citing, indexing, abstraction, and referencing purposes.

How to publish in Proceedings of the International Symposium on Power Semiconductor Devices and ICs

If your area of research or discipline is related to Engineering (miscellane, etc., please check the conference and proceedings's official website to understand the complete publication process.

Acceptance Rate

There are several factors that influence the acceptance rate of any academic journal. Here are some critical parameters that are considered while calculating the acceptance rate:

• Interest/demand of researchers/scientists for publishing in a specific journal/conference.
• The complexity of the peer review process and timeline.
• Time taken from draft submission to final publication.
• Number of submissions received and acceptance slots
• And Many More.

The simplest way to find out the acceptance rate or rejection rate of a Journal/Conference is to check with the journal's/conference's editorial team through emails or through the official website.

Credits and Sources

• Scimago Journal & Country Rank (SJR), https://www.scimagojr.com/
• Journal Impact Factor, https://clarivate.com/
• Issn.org, https://www.issn.org/
• Scopus, https://www.scopus.com/