Last Updated on June 22, 2023

Proceedings of the International Symposium on Power Semiconductor Devices and ICs- Impact Score, Ranking, SJR, h-index, Citescore, Rating, Publisher, ISSN, and Other Important Details


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Abbreviation: Proc. Int. Symp. Power Semicond. Devices ICs




Impact Score

The impact Score or journal impact score (JIS) is equivalent to Impact Factor. The impact factor (IF) or journal impact factor (JIF) of an academic journal is a scientometric index calculated by Clarivate that reflects the yearly mean number of citations of articles published in the last two years in a given journal, as indexed by Clarivate's Web of Science. On the other hand, Impact Score is based on Scopus data.

2.14

SJR

 0.709

h-Index

 49

Rank

 7015

Important Details

Title Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Standard Abbreviation Proc. Int. Symp. Power Semicond. Devices ICs
Type of Publication Conference and proceedings
Discipline Engineering (miscellaneous)
Impact Score 2.14
SCImago Journal Rank (SJR) 0.709
h-index 49
Overall Rank 7015
Publisher Name
Publication Country United States
International Standard Serial Number (ISSN) 10636854
Coverage and History
Best Quartile -
Total Citations Received
(Last 3 Year)
821

About Proceedings of the International Symposium on Power Semiconductor Devices and ICs


Proceedings of the International Symposium on Power Semiconductor Devices and ICs is a conference and proceedings published by . This conference and proceedings covers the area[s] related to Engineering (miscellane, etc. The coverage history of this conference and proceedings is as follows: . The rank of this conference and proceedings is 7015. This conference and proceedings's impact score, h-index, and SJR are 2.14, 49, and 0.709, respectively. The ISSN of this conference and proceedings is/are as follows: 10636854.

The best quartile of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is -. This conference and proceedings has received a total of 821 citations during the last three years (Preceding 2020).


Proceedings of the International Symposium on Power Semiconductor Devices and ICs Impact Score 2020-2021


The latest impact score (IS) of the Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 2.14. It is computed in the year 2021 as per its definition and based on Scopus data.

The impact score (IS), also denoted as the Journal impact score (JIS), of an academic journal is a measure of the yearly average number of citations to recent articles published in that journal. It is based on Scopus data.

Table Setting


Impact Score Graph


Check below the Impact Score trends of Proceedings of the International Symposium on Power Semiconductor Devices and ICs. This is based on Scopus data.


Year Impact Score (IS)
2023/2024 Coming Soon
2020 2.14
2019 1.98
2018 2.08
2017 2.50
2016 2.07
2015 1.63
2014 1.60

Proceedings of the International Symposium on Power Semiconductor Devices and ICs h-index


  Table Setting

The h-index of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 49. By definition of the h-index, this conference and proceedings has at least 49 published articles with more than 49 citations.

What is h-index?

The h-index (also known as the Hirsch index or Hirsh index) is a scientometric parameter used to evaluate the scientific impact of the publications and journals. It is defined as the maximum value of h such that the given Journal has published at least h papers and each has at least h citations.




Proceedings of the International Symposium on Power Semiconductor Devices and ICs ISSN


The International Standard Serial Number (ISSN) of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is/are as follows: 10636854.

The ISSN is a unique 8-digit identifier for a specific publication like Magazine or Journal. The ISSN is used in the postal system and in the publishing world to identify the articles that are published in journals, magazines, newsletters, etc. This is the number assigned to your article by the publisher, and it is the one you will use to reference your article within the library catalogues.

ISSN code (also called as "ISSN structure" or "ISSN syntax") can be expressed as follows: NNNN-NNNC
Here, N is in the set {0,1,2,3...,9}, a digit character, and C is in {0,1,2,3,...,9,X}

Table Setting

Proceedings of the International Symposium on Power Semiconductor Devices and ICs Ranking and SCImago Journal Rank (SJR)


The Proceedings of the International Symposium on Power Semiconductor Devices and ICs is ranked 7015 among 27955 Journals, Conferences, and Book Series. As per SJR, this conference and proceedings is ranked 0.709.

SCImago Journal Rank is an indicator, which measures the scientific influence of journals. It considers the number of citations received by a journal and the importance of the journals from where these citations come.


Proceedings of the International Symposium on Power Semiconductor Devices and ICs Publisher


Table Setting

The publisher of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is . The publishing house of this conference and proceedings is located in the United States. Its coverage history is as follows: .


Call For Papers (CFPs)


Please check the official website of this conference and proceedings to find out the complete details and Call For Papers (CFPs).


Abbreviation


The International Organization for Standardization 4 (ISO 4) abbreviation of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is Proc. Int. Symp. Power Semicond. Devices ICs. ISO 4 is an international standard which defines a uniform and consistent system for the abbreviation of serial publication titles, which are published regularly. The primary use of ISO 4 is to abbreviate or shorten the names of scientific journals using the technique of List of Title Word Abbreviations (LTWA).

As ISO 4 is an international standard, the abbreviation ('Proc. Int. Symp. Power Semicond. Devices ICs') can be used for citing, indexing, abstraction, and referencing purposes.


How to publish in Proceedings of the International Symposium on Power Semiconductor Devices and ICs


If your area of research or discipline is related to Engineering (miscellane, etc., please check the conference and proceedings's official website to understand the complete publication process.


Acceptance Rate


There are several factors that influence the acceptance rate of any academic journal. Here are some critical parameters that are considered while calculating the acceptance rate:

  • Interest/demand of researchers/scientists for publishing in a specific journal/conference.
  • The complexity of the peer review process and timeline.
  • Time taken from draft submission to final publication.
  • Number of submissions received and acceptance slots
  • And Many More.

The simplest way to find out the acceptance rate or rejection rate of a Journal/Conference is to check with the journal's/conference's editorial team through emails or through the official website.



Frequently Asked Questions (FAQ)


What is the impact score of Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The latest impact score of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 2.14. It is computed in the year 2021.


What is the h-index of Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The latest h-index of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 49. It is evaluated in the year 2021.


What is the SCImago Journal Rank (SJR) of Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The latest SCImago Journal Rank (SJR) of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 0.709. It is calculated in the year 2021.


What is the ranking of Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The latest ranking of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is 7015. This ranking is among 27955 Journals, Conferences, and Book Series. It is computed in the year 2021.


Who is the publisher of Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

Proceedings of the International Symposium on Power Semiconductor Devices and ICs is published by . The publication country of this conference and proceedings is United States.


What is the abbreviation of Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

This standard abbreviation of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is Proc. Int. Symp. Power Semicond. Devices ICs.


Is "Proceedings of the International Symposium on Power Semiconductor Devices and ICs" a Journal, Conference or Book Series?

Proceedings of the International Symposium on Power Semiconductor Devices and ICs is a conference and proceedings published by .


What is the scope of Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The scope of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is as follows:

  • Engineering (miscellaneous)

For detailed scope of Proceedings of the International Symposium on Power Semiconductor Devices and ICs, check the official website of this conference and proceedings.


What is the ISSN of Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The International Standard Serial Number (ISSN) of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is/are as follows: 10636854.


What is the best quartile for Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The best quartile for Proceedings of the International Symposium on Power Semiconductor Devices and ICs is -.


What is the coverage history of Proceedings of the International Symposium on Power Semiconductor Devices and ICs?

The coverage history of Proceedings of the International Symposium on Power Semiconductor Devices and ICs is as follows .


Credits and Sources


  • Scimago Journal & Country Rank (SJR), https://www.scimagojr.com/
  • Journal Impact Factor, https://clarivate.com/
  • Issn.org, https://www.issn.org/
  • Scopus, https://www.scopus.com/

Note: The impact score shown here is equivalent to the average number of times documents published in a journal/conference in the past two years have been cited in the current year (i.e., Cites / Doc. (2 years)). It is based on Scopus data and can be a little higher or different compared to the impact factor (IF) produced by Journal Citation Report. Please refer to the Web of Science data source to check the exact journal impact factor ™ (Thomson Reuters) metric.


Impact Score, SJR, h-Index, and Other Important metrics of These Journals, Conferences, and Book Series


Journal/Conference/Book Title Type Publisher Ranking SJR h-index Impact Score
Proceedings of the Spring Technical Conference of the ASME Internal Combustion Engine Division Conference And Proceedings 17477 16 0.00
Revue Francophone des Laboratoires (discontinued) Journal Elsevier Masson s.r.l. 23244 8 0.00
Materials Research Journal Universidade Federal de Sao Carlos 14791 65 1.62
International Journal of Parallel, Emergent and Distributed Systems Journal Taylor and Francis Ltd. 15843 23 1.28
Journal of Sociolinguistics Journal Wiley-Blackwell Publishing Ltd 5409 61 1.96
Indian Phytopathology Journal Springer Nature 14222 11 1.33
Epigenetics Journal Landes Bioscience 2362 105 4.11
Journal of Immigrant and Refugee Studies Journal Routledge 9246 32 1.46
Cuadernos de historia (Santiago, Chile) Journal Universidad de Chile 20081 4 0.25
Agroalimentaria Journal Centro de Investigaciones Agroalimentarias (CIAAL- 19317 8 0.20

Check complete list




Proceedings of the International Symposium on Power Semiconductor Devices and ICs Impact Score (IS) Trend

Table: Impact Score

Year Impact Score (IS)
2021/2022 Updated Soon
2020 2.14
2019 1.98
2018 2.08
2017 2.50
2016 2.07
2015 1.63
2014 1.60



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